Agnirva Space Premier League - Expedition #31960: Advancing Radiation-Hardened Electronics for Space Missions

Electronics in space are constantly subjected to harsh radiation conditions, which can lead to performance degradation or even total failure. The High Performance Radiation Hardened GaN High Electron Mobility Transistors for Space Applications experiment, led by Dr. Yuping Zeng at the University of Delaware, addresses this challenge by developing radiation-hardened electronic components designed to survive in the extreme environment of space.

GaN (Gallium Nitride) transistors are known for their high performance and resistance to radiation. This experiment focuses on developing and testing GaN-based high electron mobility transistors (HEMTs), which are critical components for future space missions. These transistors offer high efficiency and the ability to withstand radiation, making them ideal for long-term missions beyond low Earth orbit.

The experiment, conducted during Expedition(s) 72, 73, and 74 aboard the ISS, evaluates the performance of these advanced transistors in the space environment. The results will help determine their viability for use in future spacecraft, satellites, and space systems, where they could improve communication, navigation, and power systems.

Radiation-resistant electronics are essential for ensuring the reliability of space technology and for enabling the success of future crewed and uncrewed missions to the Moon, Mars, and other deep space destinations.

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